potential drop
英 [pəˈtenʃl drɒp]
美 [pəˈtenʃl drɑːp]
网络 電位降; 电位降; 电势降; 位降; 电压降
英英释义
noun
- the difference in electrical charge between two points in a circuit expressed in volts
双语例句
- The results show that, there is no obvious variation of the influence of different collector bar installations on the cathode potential drop, but the current distribution will be relatively evener when the cathode collector bar is horizontally installed.
结果表明，不同的阴极导杆安装方法对导流槽阴极的总电位降大小没有明显影响，但是水平阴极导杆安装更有利于阴极表面电流密度的均匀分布。 - What is the potential drop in an edge?
在一条边中电压降是多少？ - Detection of Notch Crack Initiation and Propagation by DC Potential Drop Method
缺口裂纹起裂和扩展检测的直流电位法 - It can be concluded that the ohmic potential drop is an important factor which has the influence over the pit growth kinetics.
这表明，欧姆电位降是影响孔蚀发展初期动力学规律的一项重要因素。 - The geometry of the cell cavity was carefully designed to minimize the ohmic potential drop and edge effect.
池腔几何结构的合理设计使电位降和边缘效应降至最低。 - It has been proved that, with the new electrodes, the influence of the floating of corrsion potential and the ic drop between the reference and research electrodes can be effectively eliminated. A new electrode system was provided for the measurement of soil corrosion.
这一电极体系能很好地克服自腐蚀电位漂移的影响和有效降低IR降，为土壤体系的腐蚀测试提供了一种可靠的电极体系。 - We give the electron and ion density, the electron temperature and the potential drop in the three different cases.
结果给出了电子和离子密度，以及电子温度、轴向电位降的分布情况，并进行了简要的分析。 - On-line monitoring of crack propagation is achieved based on the relationship for average crack propagation rate derived from film rupture-slip dissolution mechanism and using reversing DC potential drop technique.
基于膜破裂滑移溶解机制导出的裂纹平均扩展速率关系式，结合电站运行工况的系统监测，运用反向直流电位降技术实现裂纹扩展的现场实时监测。 - An Experimental Study on Low Temperature Fatigue Crack Initiation of Metals from Notches by a Microcomputer Aided Potential Drop Measurement System
金属材料低温疲劳裂纹起始寿命的微机辅助电位法测试 - Based on this, and taking the potential drop within the n-region into account, the barrier distribution of a p+-n& n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.
在此基础上，计入n~-区内的电位降，计算了商用发光二极管p~+－n~-－n结构的势垒分布，为整体结构的参数优化准备了必要的条件。